® BYT 12PI-1000 FAST RECOVERY RECTIFIER DIODE VERY HIGH REVERSE VOLTAGE CAPABILITY VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED: Capacitance 7pF Insulating voltage 2500 VRMS A SUITABLE APPLICATIONS FREE WHEELING DIODE IN CONVERTERS AND MOTOR CONTROL CIRCUITS RECTIFIER IN S.M.P.S. ABSOLUTE MAXIMUM RATINGS.
CTERISTICS Synbol IR Tj = 25°C Tj = 100°C VF Tj = 25°C Tj = 100°C IF = 12A Test Conditions VR = VRRM Min. Typ. Max. 50 2.5 1.9 1.8 Unit µA mA V RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C IF = 1A IF = 0.5A Test Conditions diF/dt = - 15A/µs IR = 1A VR = 30V Irr = 0.25A Min. Typ. Max. 155 65 Unit ns TURN-OFF SWITCHING CHARACTERISTICS (Without Series Inductance) Symbol tIRM diF/dt = - 50A/µs diF/dt = - 100A/µs IRM diF/dt = -50A/µs diF/dt = - 100A/µs 9 Test Conditions VCC = 200 V IF = 12A Lp ≤ 0.05µH Tj = 100°C See figure 11 Min. Typ. Max. 200 120 7.8 A Unit ns TURN-OFF OVERVOLTAGE COEFFICIEN.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BYT12P |
Vishay Telefunken |
Fast Recovery Silicon Power Rectifier | |
2 | BYT12P-1000 |
STMicroelectronics |
FAST RECOVERY RECTIFIER DIODE | |
3 | BYT12P-600 |
ST Microelectronics |
Fast Recovery Rectifier Diodes | |
4 | BYT12P-800 |
ST Microelectronics |
Fast Recovery Rectifier Diodes | |
5 | BYT12P1000 |
Vishay Telefunken |
Fast Recovery Silicon Power Rectifier | |
6 | BYT12P1000A |
Vishay Telefunken |
Fast Recovery Silicon Power Rectifier | |
7 | BYT12-400 |
DSI |
DIODE | |
8 | BYT106 |
Vishay Telefunken |
Fast Recovery Silicon Power Rectifier | |
9 | BYT106-1300 |
Vishay Telefunken |
Fast Recovery Silicon Power Rectifier | |
10 | BYT108 |
Vishay Telefunken |
Ultra Fast Recovery Silicon Power Rectifier | |
11 | BYT108-200 |
Vishay Telefunken |
Ultra Fast Recovery Silicon Power Rectifier | |
12 | BYT108-400 |
Vishay Telefunken |
Ultra Fast Recovery Silicon Power Rectifier |