Technical Data Diode ® maximum ratings Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current, Surge Peak (IZM) Current, Surge (IFM) at tp = 10 ms Max. Power Dissipation (PT) at TC = 100 Max. Thermal Resistance (Rth J-A) Max. Junction Temperature (TJ) °C 400 V 400 V A 12 A A 200 A 20 W 2.5 °C/W +.
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BYT12P |
Vishay Telefunken |
Fast Recovery Silicon Power Rectifier | |
2 | BYT12P-1000 |
STMicroelectronics |
FAST RECOVERY RECTIFIER DIODE | |
3 | BYT12P-600 |
ST Microelectronics |
Fast Recovery Rectifier Diodes | |
4 | BYT12P-800 |
ST Microelectronics |
Fast Recovery Rectifier Diodes | |
5 | BYT12P1000 |
Vishay Telefunken |
Fast Recovery Silicon Power Rectifier | |
6 | BYT12P1000A |
Vishay Telefunken |
Fast Recovery Silicon Power Rectifier | |
7 | BYT12PI-1000 |
STMicroelectronics |
FAST RECOVERY RECTIFIER DIODE | |
8 | BYT106 |
Vishay Telefunken |
Fast Recovery Silicon Power Rectifier | |
9 | BYT106-1300 |
Vishay Telefunken |
Fast Recovery Silicon Power Rectifier | |
10 | BYT108 |
Vishay Telefunken |
Ultra Fast Recovery Silicon Power Rectifier | |
11 | BYT108-200 |
Vishay Telefunken |
Ultra Fast Recovery Silicon Power Rectifier | |
12 | BYT108-400 |
Vishay Telefunken |
Ultra Fast Recovery Silicon Power Rectifier |