BYT11-600 - STMicroelectronics

BYT11-600 FAST RECOVERY RECTIFIER DIODES

BYT 11-600 →1000 FAST RECOVERY RECTIFIER DIODES SOFT RECOVERY VERY HIGH VOLTAGE SMALL RECOVERY CHARGE APPLICATIONS ANTISATURATION DIODES FOR TRANSISTOR BASE DRIVE SNUBBER DIODES ABSOLUTE RATINGS (limiting values) Symbol IFRM IF (AV) IFSM Ptot Tstg Tj TL Parameter Repetive Peak Forward Current Average Forward Current * Surge non Repetitive Forward Current Po.

Features

VR = VRRM IF = 1A Min. Typ. Max. 20 1.3 Unit µA V RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C Test Conditions IF = 0.5A IR = 1A Irr = 0.25A Min. Typ. Max. 100 Unit ns To evaluate the conduction losses use the following equations: VF = 1.1 + 0.075 IF P = 1.1 x IF(AV) + 0.075 IF2(RMS) F i gu re 1. Ma xi mu m av era ge power dissipation versus average forward current. Figure 2. Average forward current versus ambient temperature. Figure 3. Thermal resistance versus lead length. Mounting n°1 INFINITE HEATSINK Mounting n°2 PRINTED CIRCUIT Test point of tlead Soldering 2/4 BYT 11-600 → 1.