BUZ73A - Infineon Technologies AG

BUZ73A Power Transistor

SIPMOS ® Power Transistor BUZ 73A • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 200 V ID 5.5 A RDS(on) 0.6 Ω Package Ordering Code BUZ 73 A TO-220 AB C67078-S1317-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 37 ˚C ID A 5.5 Pulsed drain current TC = 25 ˚C IDpuls 22 IA.

Features

Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C V (BR)DSS V 200 - Gate threshold voltage VGS=VDS, ID = 1 mA V GS(th) 2.1 IDSS 3 4 µA Zero gate voltage drain current VDS = 200 V, V GS = 0 V, Tj = 25 ˚C VDS = 200 V, V GS = 0 V, Tj = 125 ˚C IGSS 0.1 10 1 100 nA Gate-source leakage current VGS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance VGS = 10 V, ID = 4.5 A Ω 0.5 0.6 Data Sheet 2 05.99 BUZ 73A Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbo.