BUZ50A–220M BUZ50B–220M MECHANICAL DATA Dimensions in mm 10.6 (0.42) 0.8 4.6 (0.18) (0.03) 3.70 Dia. Nom 16.5 (0.65) 1.5(0.53) 10.6 (0.42) 123 MOS POWER N-CHANNEL ENHANCEMENT MODE TRANSISTORS FEATURES • HERMETIC TO220 ISOLATED METAL PACKAGE • CECC SCREENING OPTIONS • JAN LEVEL SCREENING OPTIONS 12.70 (0.50 min) 2.54 (0.1) BSC 1.0 (0.039) 2.70 (0.10.
• HERMETIC TO220 ISOLATED METAL PACKAGE
• CECC SCREENING OPTIONS
• JAN LEVEL SCREENING OPTIONS
12.70 (0.50 min)
2.54 (0.1) BSC
1.0 (0.039) 2.70 (0.106)
TO220M (TO-257AB)- Isolated Metal Package Pin 1
– Gate Pin 2
– Drain Pin 3
– Source
APPLICATIONS:
Hermetically sealed version for high reliability power linear and switching applications
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDS
Drain
– Source Voltage
VGS
Gate
– Source Voltage
ID
Continious Drain Current
IDM
Maximum Pulsed Drain Current
PD
Total Power Dissipation at Tcase ≤ 25°C
Tstg
Storage Temperatu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUZ50B |
Siemens Semiconductor Group |
Power Transistor | |
2 | BUZ50A |
Siemens Semiconductor Group |
Power Transistor | |
3 | BUZ50A |
ETC |
HIGH VOLTAGE POWER MOSFET | |
4 | BUZ50A-220M |
Seme LAB |
MOS POWER N-CHANNEL ENHANCEMENT MODE TRANSISTORS | |
5 | BUZ50C |
Siemens Semiconductor Group |
Power Transistor | |
6 | BUZ51 |
Siemens Semiconductor Group |
Power Transistor | |
7 | BUZ53 |
Siemens Semiconductor Group |
Power Transistor | |
8 | BUZ53C |
Siemens Semiconductor Group |
Power Transistor | |
9 | BUZ54 |
NJS |
Power MOS Transistor | |
10 | BUZ54A |
Philips |
Power MOS Transistor | |
11 | BUZ58 |
Siemens Semiconductor Group |
Power Transistor | |
12 | BUZ58A |
Siemens Semiconductor Group |
Power Transistor |