BUZ50A-220M - Seme LAB

BUZ50A-220M MOS POWER N-CHANNEL ENHANCEMENT MODE TRANSISTORS

BUZ50A–220M BUZ50B–220M MECHANICAL DATA Dimensions in mm 10.6 (0.42) 0.8 4.6 (0.18) (0.03) 3.70 Dia. Nom 16.5 (0.65) 1.5(0.53) 10.6 (0.42) 123 MOS POWER N-CHANNEL ENHANCEMENT MODE TRANSISTORS FEATURES • HERMETIC TO220 ISOLATED METAL PACKAGE • CECC SCREENING OPTIONS • JAN LEVEL SCREENING OPTIONS 12.70 (0.50 min) 2.54 (0.1) BSC 1.0 (0.039) 2.70 (0.10.

Features

• HERMETIC TO220 ISOLATED METAL PACKAGE
• CECC SCREENING OPTIONS
• JAN LEVEL SCREENING OPTIONS 12.70 (0.50 min) 2.54 (0.1) BSC 1.0 (0.039) 2.70 (0.106) TO220M (TO-257AB)- Isolated Metal Package Pin 1
  – Gate Pin 2
  – Drain Pin 3
  – Source APPLICATIONS: Hermetically sealed version for high reliability power linear and switching applications ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDS Drain
  – Source Voltage VGS Gate
  – Source Voltage ID Continious Drain Current IDM Maximum Pulsed Drain Current PD Total Power Dissipation at Tcase ≤ 25°C Tstg Storage Temperatu.