BUZ171 - Siemens Semiconductor Group

BUZ171 Power Transistor

BUZ 171 SIPMOS ® Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 171 VDS -50 V ID -8 A RDS(on) 0.3 Ω Package TO-220 AB Ordering Code C67078-S1450-A2 Maximum Ratings Parameter Continuous drain current Symbol Values -8 Unit A ID IDpuls -32 TC = 30 °C Pulsed drain current TC = 25 °C Avalanche ene.

Features

)DSS -50 -3 -0.1 -10 -10 0.25 -4 V VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) -2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS -1 -100 µA VDS = -50 V, VGS = 0 V, Tj = 25 °C VDS = -50 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS -100 nA Ω 0.3 VGS = -20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = -10 V, ID = -5 A Semiconductor Group 2 07/96 BUZ 171 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 1.5 2.3 750 27.