BUZ171 |
Part Number | BUZ171 |
Manufacturer | TEMIC |
Description | TEMIC Siliconix P-Channel Enhancement-Mode Transistor Product Summary V(BR)nSS (V) -50 rnS(on) (Q) 0.40 In (A) -7.0 TO·220AB S o DRAIN connected to TAB BUZ171 GDS Top View D P-Channel MOSFE... |
Features |
down Voltage
V(BR)DSS
VGS = 0 Y, 10 = -250!1A
-50
Gate Threshold Voltage
VGS(tb)
VDS = VGS, 10 = -1 rnA
-2.1
Gate-Body Leakage
IGSS
VDS = OY, VGS = ±20V
Zero Gate Voltage Drain Current
VDS = -50, VGS = OV
loss
VDS = -50 Y, VGS = OY, TJ = 125'C
On-State Drain Currentb
ID(on)
VDS = -lOY, VGS = -10V
-7.0
Drain-Source On-State Resistanceb
roS(on)
VGS = -10 Y, 10 = -4.5 A VGS - -lOY, 10 = -4.5 A, TJ -125'C
Forward 'Iransconductanceb
gr,
VDS - -15 Y, 10 - -4.5 A
1.5
Dynamic
Input Capacitance Output Capacitance Reverse 'Iransfer Capacitance 1btal Gate Chargee Gate-Source Char... |
Document |
BUZ171 Data Sheet
PDF 185.92KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUZ17 |
Siemens Semiconductor Group |
Power Transistor | |
2 | BUZ171 |
Siemens Semiconductor Group |
Power Transistor | |
3 | BUZ172 |
Siemens Semiconductor Group |
Power Transistor | |
4 | BUZ172 |
INCHANGE |
P-Channel MOSFET | |
5 | BUZ173 |
Siemens Semiconductor Group |
Power Transistor |