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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, fast switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-.
AMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V IEBO Emitter cut-off current ICES Collector Cutoff Current hFE DC Current Gain VEB=7V; IC=0 VCE= 500V;VBE= 0 VCE= 500V;VBE= 0; Tc= 125℃ IC= 1A; VCE= 5V 15 1 mA 0.5 3.0 mA 50 Switching Times; Resistive Load ton Turn-On Time IC= 5A; IB1= 1A; VCC=250V 0.7 μs ts Storage Time tf Fall Time IC= 5A; IB1= -IB2= 1A; VCC=250V 3.0 μs 0.8 μ.
BUW34 - Seme LAB
BUW34 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.
BUW34 - SavantIC
·With TO-3 package ·High breakdown voltage APPLICATIONS ·For high voltage ,fast switching applications PINNING (See Fig..
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUW32A |
Seme LAB |
Bipolar PNP Device |
|
| 2 | BUW35 |
Seme LAB |
Bipolar NPN Device |
|
| 3 | BUW35 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | BUW35 |
INCHANGE |
NPN Transistor |
|
| 5 | BUW36 |
Seme LAB |
Bipolar NPN Device |
|
| 6 | BUW36 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | BUW36 |
INCHANGE |
NPN Transistor |
|
| 8 | BUW38 |
Seme LAB |
Bipolar NPN Device |
|
| 9 | BUW38 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 10 | BUW39 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 11 | BUW39 |
Seme LAB |
Bipolar NPN Device |
|
| 12 | BUW1015 |
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
|