·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ·For audio amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALU.
C=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 50mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A VBE(sat) Base-Emitter Saturation Voltage IC= 15A; IB= 1.5A ICEO Collector Cutoff Current VCE= 300V; IB=0 ICBO Collector Cutoff Current VCB= 400V; IE=0 hFE DC Current Gain IC= 5A; VCE= 4V BUV62A MIN MAX UNIT 300 V 400 V 7 V 0.9 V 1.3 V 1.0 mA 1.0 mA 40 50 NOTICE:.
FAST SWITCHING NPN POWER TRANSISTOR BUV62A • Fast Switching Times • Low Switching Losses • Low Saturation Voltage • Herm.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUV62 |
Seme LAB |
Bipolar NPN Device | |
2 | BUV62 |
Seme LAB |
FAST SWITCHING POWER TRANSISTOR | |
3 | BUV60 |
ON Semiconductor |
SWITCHMODE Series NPN Silicon Power Transistor | |
4 | BUV60 |
Seme LAB |
Bipolar NPN Device | |
5 | BUV61 |
STMicroelectronics |
HIGH POWER NPN SILICON TRANSISTOR | |
6 | BUV61 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
7 | BUV61 |
Seme LAB |
Bipolar NPN Device | |
8 | BUV66 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
9 | BUV10 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
10 | BUV10N |
Seme LAB |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package | |
11 | BUV11 |
Motorola Inc |
20 AMPERES NPN SILICON POWER METAL TRANSISTOR | |
12 | BUV11 |
ON Semiconductor |
SITCHMODE Series NPN Silicon Power Transistor |