BUV60 - ON Semiconductor

BUV60 SWITCHMODE Series NPN Silicon Power Transistor

ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistor . . . designed for high speed, high current, high power applications. BUV20 BUV60 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS • High DC current gain: • • hFE min = 20 at IC = 25 A = 10 at IC = 50 A Low VCE(sat): VCE(sat) max. = 0.6 V at IC = 25 A = 0.9 V at IC = 50 A V.

Features

ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS BUV20 160 160 150 BUV60 260 260 260 Unit Vdc Vdc Vdc Vdc Vdc Adc Apk Adc Collector
  –Emititer Voltage Collector
  –Base Voltage Emitter
  –Base Voltage VCEO(sus) 125 7 Collector
  –Emitter Voltage (VBE =
  –1.5 V) Collector
  –Emitter voltage (RBE = 100 Ω) VCER IC ICM IB Collector
  –Current — Continuous — Peak (PW v 10 ms) Base
  –Current continuous 50 60 10 Total Power Dissipation @ TC = 25_C PD 250 Watts _C Operating and Storage Junction Temperature Range TJ, Tstg
  –65 to 200 CASE 197A
  –0.