Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features • High DC Current Gain: hFE min = 20 at IC = 12 A • Low VCE(sat), VCE(sat) max = 0.6 V at IC = 8 A • Very Fast Switching Times: TF max = 0.4 ms at IC = 25 A • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbo.
• High DC Current Gain:
hFE min = 20 at IC = 12 A
• Low VCE(sat), VCE(sat)
max = 0.6 V at IC = 8 A
• Very Fast Switching Times:
TF max = 0.4 ms at IC = 25 A
• These are Pb−Free Devices
*
MAXIMUM RATINGS
Rating
Symbol
Value
Collector−Emitter Voltage
VCEO(SUS)
200
Collector−Base Voltage
VCBO
250
Emitter−Base Voltage
VEBO
7
Collector−Emitter Voltage (VBE = −1.5 V)
VCEX
250
Collector−Emitter Voltage (RBE = 100 W)
VCER
240
Collector−Current − Continuous
IC
40
− Peak (PW v 10 ms)
ICM
50
Base−Current Continuous
IB
8
Total Device Dissipation @ TC = 25_C
PD
250
Operating .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUV21 |
Motorola Inc |
40 AMPERES NPN SILICON POWER METAL TRANSISTOR |
|
| 2 | BUV21 |
ON Semiconductor |
NPN Silicon Power Transistor |
|
| 3 | BUV21 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | BUV21 |
ETC |
NPN Silicon Low Frequency High Power Switching Transistor |
|
| 5 | BUV21 |
Semelab |
Bipolar NPN Device |
|
| 6 | BUV20 |
Motorola Inc |
NPN Transistor |
|
| 7 | BUV20 |
ON Semiconductor |
NPN Silicon Power Transistor |
|
| 8 | BUV20 |
STMicroelectronics |
HIGH CURRENT NPN SILICON TRANSISTOR |
|
| 9 | BUV20 |
Seme LAB |
NPN MULTI - EPITAXIAL POWER TRANSISTOR |
|
| 10 | BUV20 |
TT |
SILICON MULTI-EPITAXIAL NPN TRANSISTOR |
|
| 11 | BUV20 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 12 | BUV22 |
Motorola Inc |
40 AMPERES NPN SILICON POWER METAL TRANSISTOR |
|