·With TO-220C package ·High voltage;high speed ·High power dissipation APPLICATIONS ·Switching mode power supply ·Motor control and relay driver PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolut maximum ratings (Ta=25 ) SYMBOL VCBO PARAMETER BUT76 Collector-base voltage BUT76A BUT76 VCEO VEBO IC ICM IBM Ptot Tj Tstg Col.
ss otherwise specified PARAMETER BUT76 IC=500mA ;LC=125mH BUT76A IE=1mA ;IC=0 IC=6A ;IB=1.2A CONDITIONS www.datasheet4u.com BUT76 BUT76A SYMBOL MIN 400 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 450 6 V V(BR)EBO Emitter-base breakdown voltage BUT76 BUT76A BUT76 BUT76A BUT76 BUT76A VCEsat Collector-emitter saturation voltage 1.5 IC=5A ;IB=1A IC=6A ;IB=1.2A 1.6 IC=5A ;IB=1A VCE=850V; VBE=0 Tj=150 VCE=1000V; VBE=0 Tj=150 IC=8A ; VCE=3V IE=0 ;VCB=10V;f=1MHz IC=1A ;VCE=10V 3.2 150 7 0.5 2.0 0.5 2.0 V VBEsat Base-emitter saturation voltage V ICES Collector cut-o.
Telefunken Transistor BUT76A Datasheet Silicon NPN Transistor BUT76A 1000V / 12A DATASHEET OEM – Telefunken Source.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUT76 |
Telefunken |
Silicon NPN Transistor | |
2 | BUT76 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | BUT70 |
STMicroelectronics |
HIGH POWER NPN SILICON TRANSISTOR | |
4 | BUT70W |
ST Microelectronics |
HIGH POWER NPN TRANSISTOR | |
5 | BUT72 |
Seme LAB |
NPN MULTI-EPITAXIAL POWER TRANSISTOR | |
6 | BUT100 |
STMicroelectronics |
HIGH POWER NPN SILICON TRANSISTOR | |
7 | BUT100 |
INCHANGE |
NPN Transistor | |
8 | BUT11 |
NXP |
Silicon diffused power transistors | |
9 | BUT11 |
Power Innovations Limited |
NPN SILICON POWER TRANSISTOR | |
10 | BUT11 |
TRSYS |
NPN SILICON POWER TRANSISTOR | |
11 | BUT11 |
Wing Shing Computer Components |
NPN SILICON TRANSISTOR | |
12 | BUT11 |
Bourns Electronic Solutions |
NPN SILICON POWER TRANSISTOR |