BUT70W - ST Microelectronics

BUT70W HIGH POWER NPN TRANSISTOR

The BUT70W is a Multiepitaxial planar NPN transistor in TO-247 plastic package. It’s intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO I E(RMS) I EM IB I BM P tot T stg Tj Parameter Collector-emitter Voltage (V BE = -1.

Features

mperature February 2002 1/4 BUT70W THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.63 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEV IEBO Parameter Collector Cut-off Current (R BE = 5 Ω ) Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 200 V V CE = 200 V V CE = 200 V V CE = 200 V V EB = 5 V I C = 0.2 A L = 25 mH 125 T C = 100 o C T C = 100 o C Min. Typ. Max. 1 5 1 4 1 Unit mA mA mA mA mA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V(BR)EBO Emitter-Base Breakd.