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High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. dbook, halfpage BUT18; BUT18A APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. MBK106 2 1 3 MBB008 PINNING PIN 1 2 3 DESCRIPTION base collector; connected to mounting base emitter 1 2 3 Fig.1 Simplified outline (TO-220AB) and sym.
110 0.8 V V V A A A W µs PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1.15 UNIT K/W 1999 Jun 11 2 Philips Semiconductors Product specification Silicon diffused power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM BUT18 BUT18A VCEO collector-emitter voltage BUT18 BUT18A ICsat IC ICM IB IBM Ptot Tstg Tj collector saturation current collector current (DC) collector current (peak value) base c.
BUT18 - SavantIC
·With TO-220C package www.datasheet4u.com ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regul.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUT100 |
STMicroelectronics |
HIGH POWER NPN SILICON TRANSISTOR |
|
| 2 | BUT100 |
INCHANGE |
NPN Transistor |
|
| 3 | BUT11 |
NXP |
Silicon diffused power transistors |
|
| 4 | BUT11 |
Power Innovations Limited |
NPN SILICON POWER TRANSISTOR |
|
| 5 | BUT11 |
TRSYS |
NPN SILICON POWER TRANSISTOR |
|
| 6 | BUT11 |
Wing Shing Computer Components |
NPN SILICON TRANSISTOR |
|
| 7 | BUT11 |
Bourns Electronic Solutions |
NPN SILICON POWER TRANSISTOR |
|
| 8 | BUT11 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | BUT11A |
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
|
| 10 | BUT11A |
NXP |
Silicon diffused power transistors |
|
| 11 | BUT11A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | BUT11A |
nELL |
High Voltage Fast-switching NPN Power Transistor |
|