BUT18 NXP Silicon diffused power transistors Datasheet, en stock, prix

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BUT18

NXP
BUT18
BUT18 BUT18
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Part Number BUT18
Manufacturer NXP (https://www.nxp.com/)
Description High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. dbook, halfpage BUT18; BUT18A APPLICATIONS • Converters • Inverters • Switching regulators • Motor control syst...
Features 110 0.8 V V V A A A W µs PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1.15 UNIT K/W 1999 Jun 11 2 Philips Semiconductors Product specification Silicon diffused power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM BUT18 BUT18A VCEO collector-emitter voltage BUT18 BUT18A ICsat IC ICM IB IBM Ptot Tstg Tj collector saturation current collector current (DC) collector current (peak value) base c...

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