BUS48AP - INCHANGE

BUS48AP NPN Transistor

·High Voltage Capability ·High Current Capability ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical. They are particulary suited for line-operated swtchmode applications Absolute maximu.

Features

emi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0; V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A IC= 8A; IB= 1.6A;TC= 100℃ VCE (sat)-2 Collector-Emitter Saturation Voltage IC= 12A; IB= 2.4A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Base Cutoff Current IC= 8A; IB= 1.6A IC= 8A; IB= 1.6A;TC= 100℃ VCE=1000V; IE= 0 VCE=1000V; IE= 0;TC=1.