·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, fast switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 8.
ed SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 MIN TYP. MAX UNIT 450 V 9 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.5 V VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current Switching Times ton Turn-on Time ts Storage Time tf Fall Time IC= 2.5A; IB= 0.5A VCE=RatedVCES ;VBE= 0 VCE=RatedVCES ;VBE= 0;TC=125℃ VEB= 9V; IC= 0 IC= 2.5A;IB1=-IB2= 0.5A;VCC= 150V 1.3 V 0.1 1.0 mA 1.0 mA 1.0 μs 3.0 μs 0.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUS47 |
Motorola |
NPN SILICON POWER TRANSISTORS | |
2 | BUS47A |
Motorola |
NPN SILICON POWER TRANSISTORS | |
3 | BUS48 |
Motorola Inc |
NPN SILICON POWER TRANSISTORS | |
4 | BUS48 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
5 | BUS48A |
Motorola Inc |
NPN SILICON POWER TRANSISTORS | |
6 | BUS48A |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
7 | BUS48AP |
Motorola |
NPN Silicon Power Transistors | |
8 | BUS48AP |
INCHANGE |
NPN Transistor | |
9 | BUS48P |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
10 | BUS-61553 |
Data Device |
Advanced Integrated MUX Hybrid | |
11 | BUS-61553-xxxx |
Data Device |
Advanced Integrated MUX Hybrid | |
12 | BUS-61554-xxxx |
Data Device |
Advanced Integrated MUX Hybrid |