BUP602D - Siemens Semiconductor Group

BUP602D IGBT

BUP 602D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 G Type BUP 602D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 600 600 Unit V Pin 2 C Ordering Code Q67040-A4229-A2 Pin 3 E VCE 600V IC.

Features

rmal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC RthJCD ≤ 0.83 ≤ 1.5 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.1 2.2 3 3.3 6.5 2.7 2.8 - V VGE = VCE, IC = 0.5 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 20 A, Tj = 25 °C VGE = 15 V, IC = 20 A, Tj = 125 °C VGE = 15 V, IC = 40 A, Tj = 25 °C VGE = 15 V, IC = 40 A, Tj = 125 °C Zero gate voltage collector current ICES 200 µA nA 100 VCE = 600 V, VGE = 0 V, .