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BUP602D |
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| Part Number | BUP602D |
| Manufacturer | Siemens Semiconductor Group |
| Description | BUP 602D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 G Type BUP 602D Max... |
| Features |
rmal resistance, chip case Symbol Values E 55 / 150 / 56 Unit -
RthJC RthJCD
≤ 0.83 ≤ 1.5
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.1 2.2 3 3.3 6.5 2.7 2.8 -
V
VGE = VCE, IC = 0.5 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 20 A, Tj = 25 °C VGE = 15 V, IC = 20 A, Tj = 125 °C VGE = 15 V, IC = 40 A, Tj = 25 °C VGE = 15 V, IC = 40 A, Tj = 125 °C
Zero gate voltage collector current
ICES
200
µA nA 100
VCE = 600 V, VGE = 0 V, ... |
| Document |
 BUP602D Data Sheet
PDF 106.35KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUP603D |
Siemens Semiconductor Group |
IGBT |
|
| 2 | BUP604 |
Siemens Semiconductor Group |
IGBT |
|
| 3 | BUP06CN015E-01 |
Infineon |
60V Radiation Tolerant power MOSFET |
|
| 4 | BUP06CN035L-01 |
Infineon |
60V Radiation Tolerant power MOSFET |
|
| 5 | BUP200 |
Siemens Semiconductor Group |
IGBT |
|