BULD50SL - Power Innovations Limited

BULD50SL NPN Transistor

The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of switching transistors has tightly controlled storage times and an integrated fast trr antiparallel diode. The revolutionary design ensures that the diode has both fast forward and reverse recovery times, achieving the same.

Features

design ensures that the diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel diode plus transistor. The integrated diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a voltage matched integrated transistor and anti-parallel diode. device symbol C B E absolute maximum ratings at 25°C ¦ (unless otherwise noted) RATING Collector-emitter voltage (V BE = 0) Collector-base voltage (IE = 0) Co.