Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BULD118 |
STMicroelectronics |
NPN Transistor |
|
| 2 | BULD1101E |
STMicroelectronics |
High voltage fast-switching NPN Power Transistor |
|
| 3 | BULD1101ET4 |
STMicroelectronics |
High voltage fast-switching NPN Power Transistor |
|
| 4 | BULD116D |
STMicroelectronics |
MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
|
| 5 | BULD125KC |
Power Innovations Limited |
NPN Transistor |
|
| 6 | BULD125KC |
TRSYS |
NPN Transistor |
|
| 7 | BULD25 |
Power Innovations Limited |
NPN Transistor |
|
| 8 | BULD25D |
Power Innovations Limited |
NPN Transistor |
|
| 9 | BULD25DR |
Power Innovations Limited |
NPN Transistor |
|
| 10 | BULD25SL |
Power Innovations Limited |
NPN Transistor |
|
| 11 | BULD39D-1 |
ST Microelectronics |
High Voltage Fast-Switching NPN Power Transistor |
|
| 12 | BULD39DT4 |
ST Microelectronics |
High Voltage Fast-Switching NPN Power Transistor |
|