BUL53BSMD - Seme LAB

BUL53BSMD NPN Transistor

BUL53BSMD MECHANICAL DATA Dimensions in mm ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR 3 .6 0 (0 .1 4 2 ) M a x . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 3 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 • CERAM.

Features

• Multi-Base design for efficient energy distribution across the chip.
• SIgnificantly improved switching and energy ratings across full temperature range.
• Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
• Triple guard rings for improved control of high voltages. SMD1 Pad 1
  – Base Pad 2
  – Collector Pad 3
  – Emitter ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC IC(PK) IB PD R? Tj Tstg Collector
  – Base Voltage Collector
  – Emitter Voltage (IB = 0) Emitter
  – Base Voltage (IC = 0) Collector Current Peak Collector.