Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Low conduction losses due to low on-state resistance Suitable for lo.
AEC Q101 compliant Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications 12 V, 24 V and 42 V loads Automotive and general purpose power switching Motors, lamps and solenoids 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 Min Typ Max Unit 100 41 149 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUK9535-55 |
NXP |
TrenchMOS transistor Logic level FET | |
2 | BUK9535-55A |
NXP Semiconductors |
N-Channel MOSFET | |
3 | BUK953R2-40B |
NXP Semiconductors |
N-channel TrenchMOS logic level FET | |
4 | BUK953R2-40E |
NXP Semiconductors |
N-channel TrenchMOS logic level FET | |
5 | BUK953R5-60E |
NXP Semiconductors |
N-Channel MOSFET | |
6 | BUK9504-40A |
NXP |
(BUK9x04-40A) TrenchMOS logic level FET | |
7 | BUK9505-30A |
NXP |
TrenchMOS transistor Logic level FET | |
8 | BUK9506-30 |
NXP |
TrenchMOS transistor Logic level FET | |
9 | BUK9506-40B |
NXP Semiconductors |
N-Channel MOSFET | |
10 | BUK9506-55A |
NXP |
TrenchMOS transistor Logic level FET | |
11 | BUK9506-55A |
NXP Semiconductors |
TrenchMOS logic level FET | |
12 | BUK9506-55B |
NXP |
(BUK9x06-55B) N-channel TrenchMOSTM logic level FET |