·With TO-220F package ·High voltage ·High speed switching APPLICATIONS ·For use in high frequency electronic lighting ballast applications. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collec.
itter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=100mA ;IB=0;L=25mH IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A VCE=rated;VBE=0 Tj=125 VEB=12V; IC=0 IC=5mA ; VCE=10V IC=0.4A ; VCE=3V IC=1.5A ; VCE=1V 8 12 5 18 7 35 MIN 750 1.0 1.3 1.0 2.0 1.0 TYP. MAX UNIT V V V mA mA SYMBOL VCEO(SUS) VCEsat VBEsat ICES IEBO hFE-1 hFE-2 hFE-3 Switching times ton ts tf Turn-on time Storage time Fall time IC=1.5A ;IB1=-IB2=0.3A 1.1 5.0 0.75 1.5 6.5 1.0 µs µs µs 2 SavantIC Semiconductor Product Speci.
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope .
·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BU1706A |
INCHANGE |
NPN Transistor | |
2 | BU1706A |
NXP |
Silicon Diffused Power Transistor | |
3 | BU1706AB |
NXP |
Silicon Diffused Power Transistor | |
4 | BU17074KV |
ROHM |
Serial Interface Transceiver LSI | |
5 | BU17UA3WNVX-TL |
Rohm |
FULL CMOS LDO Regulator | |
6 | BU17UC3WG-TL |
Rohm |
FULL CMOS LDO Regulator | |
7 | BU17UC3WG-TR |
Rohm |
FULL CMOS LDO Regulator | |
8 | BU100 |
Inchange Semiconductor |
Silicon NPN Power Transistors | |
9 | BU1006 |
Vishay Siliconix |
Enhanced PowerBridge Rectifiers | |
10 | BU1006-E3 |
Vishay |
Bridge Rectifiers | |
11 | BU1006-M3 |
Vishay |
Bridge Rectifiers | |
12 | BU1006A |
Vishay Siliconix |
Enhanced PowerBridge Rectifiers |