BU123 - INCHANGE

BU123 NPN Transistor

·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0 V(Max)@ IC = 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120 V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output stage of TVs and CRTs applications ABSOLUTE MAXIMUM R.

Features

ctor-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Base Cutoff Current VCB=180V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 5V hFE-2 DC Current Gain IC= 5A ; VCE= 5V fT Current Gain-Bandwidth Product IC= 0.5A ; VCE= 10V BU123 MIN MAX UNIT 120 V 1.0 V 1.2 V 1.0 mA 1.0 mA 25 250 5 10 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without .