·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0 V(Max)@ IC = 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 150 V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output stage of TVs and CRTs applications ABSOLUTE MAXIMUM R.
ctor-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Base Cutoff Current VCB=250V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 5V hFE-2 DC Current Gain IC= 5A ; VCE= 5V fT Current Gain-Bandwidth Product IC= 0.5A ; VCE= 10V BU122 MIN MAX UNIT 150 V 1.0 V 1.2 V 1.0 mA 1.0 mA 25 250 5 10 MHz NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BU120 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
2 | BU120 |
Seme LAB |
Bipolar NPN Device | |
3 | BU1206 |
Vishay Siliconix |
Enhanced PowerBridge Rectifiers | |
4 | BU1206-E3 |
Vishay |
Bridge Rectifiers | |
5 | BU1206-M3 |
Vishay |
Bridge Rectifiers | |
6 | BU1208 |
Vishay Siliconix |
Enhanced PowerBridge Rectifiers | |
7 | BU1208-E3 |
Vishay |
Bridge Rectifiers | |
8 | BU1208-M3 |
Vishay |
Bridge Rectifiers | |
9 | BU1210 |
Vishay Siliconix |
Enhanced PowerBridge Rectifiers | |
10 | BU1210-E3 |
Vishay |
Bridge Rectifiers | |
11 | BU1210-M3 |
Vishay |
Bridge Rectifiers | |
12 | BU123 |
INCHANGE |
NPN Transistor |