BTS3142D - Infineon Technologies AG

BTS3142D Smart Lowside Power Switch

N channel vertical power FET in Smart SIPMOS ® technology. Fully protected by embedded protection functions. Vbb HITFET ® In Pin 1 Gate-Driving Unit Current Limitation OvervoltageProtection ESD Overload Protection Overtemperature Protection Short circuit Protection Drain Pin 2 and 4 (TAB) Source Pin 3 M Datasheet 1 Rev. 1.4, 2013-03-07 Smart .

Features

· Logic Level Input
· Input Protection (ESD)
· Thermal shutdown
• Green product (RoHS compliant)
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible Product Summary Drain source voltage VDS 42 V On-state resistance RDS(on) 28 mΩ Nominal load current Clamping energy ID(Nom) EAS 4.6 A 3.5 J P / PG-TO252-3-11 Application
• All kinds of resistive, inductive and capacitive loads in switching or linear applications
• μC compatible power switch for 12 V DC applications
• Replaces electromechanical relays and discrete circui.