BTS3118N - Infineon Technologies

BTS3118N Smart Low Side Power Switch

N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Vbb HITFET In Pin 1 Gate-Driving Unit Current Limitation OvervoltageProtection ESD Overload Protection Overtemperature Protection Short circuit Protection Drain Pin 2 and 4 (TAB) Source Pin 3 M Datasheet 1 Rev. 1.3, 2008-04-14 Smart Low.

Features

· Logic Level Input
· Input Protection (ESD)
· Thermal shutdown
• Green product (RoHS compliant)
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible Product Summary Drain source voltage On-state resistance Nominal load current Clamping energy VDS RDS(on) I D(Nom) EAS 42 100 2.17 250 V m
A mJ 4 3 2 1 VPS05163 Application  All kinds of resistive, inductive and capacitive loads in switching or linear applications  µC compatible power switch for 12 V DC applications  Replaces electromechanical relays and discrete circui.