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BTS110 |
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| Part Number | BTS110 |
| Manufacturer | Siemens Semiconductor Group |
| Description | TEMPFET® BTS 110 Features q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 3 1 2 Pin 1 G 2 D 3 S Type BTS 11... |
| Features |
q q q q
N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab
3 1 2
Pin
1 G
2 D
3 S
Type BTS 110
VDS
100 V
ID
10 A
RDS(on)
0.2 Ω
Package TO-220AB
Ordering Code C67078-A5008-A2
Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 25 °C ISO drain current TC = 85 °C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values 100 100 ± 20 10 1.75 40 37 500 40 – 55 ... + 150 E 55/150/56 K/W ≤ 3.1 ≤ 75 °C – W A Unit V ... |
| Document |
 BTS110 Data Sheet
PDF 320.68KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BTS110 |
Infineon Technologies AG |
TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic) |
|
| 2 | BTS110 |
Infineon Technologies AG |
TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic) |
|
| 3 | BTS112A |
Siemens Semiconductor Group |
TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic) |
|
| 4 | BTS112A |
Infineon Technologies AG |
TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic) |
|
| 5 | BTS113A |
Siemens Semiconductor Group |
TEMPFET (N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic) |
|