BTB12-600TW3G - ON Semiconductor

BTB12-600TW3G Triacs

BTB12-600TW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features • Blocking Voltage to 600 V • On-State Current Rating of 12 A RMS at 80°C • Uniform Gate Trigger Currents in Three Quadrants • High Immunity to dV/dt − 10 V/ms mini.

Features

• Blocking Voltage to 600 V
• On-State Current Rating of 12 A RMS at 80°C
• Uniform Gate Trigger Currents in Three Quadrants
• High Immunity to dV/dt − 10 V/ms minimum at 125°C
• Minimizes Snubber Networks for Protection
• Industry Standard TO-220AB Package
• High Commutating dI/dt − 1.75 A/ms minimum at 110°C
• These are Pb−Free Devices MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) BTB12−600TW3G VDRM, VRRM 600 V On-State RMS Current (Full Cycle Sine Wave, 6.