BTB12-600BW3G - ON Semiconductor

BTB12-600BW3G Triacs Silicon Bidirectional Thyristors

www.DataSheet4U.com BTB12-600BW3G, BTB12-800BW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full‐wave ac control applications where high noise immunity and high commutating di/dt are required. Features http://onsemi.com •ăBlocking Voltage to 800 V •ăOn‐State Current Rating of 12 Amperes RMS at 25°C •ăUniform Gate Trigger Currents.

Features

http://onsemi.com
•ăBlocking Voltage to 800 V
•ăOn‐State Current Rating of 12 Amperes RMS at 25°C
•ăUniform Gate Trigger Currents in Three Quadrants
•ăHigh Immunity to dV/dt - 2000 V/ms minimum at 125°C
•ăMinimizes Snubber Networks for Protection
•ăIndustry Standard TO‐220AB Package
•ăHigh Commutating dI/dt - 4 A/ms minimum at 125°C
•ăThese are Pb-Free Devices MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off-State Voltage (Note 1) (TJ = -40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) BTB12-600BW3G BTB12-800BW3G On‐State RMS Current (Full Cycle Sine Wave, 60 Hz, T.