Glass passivated high commutation triacs in a full pack, plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber. BTA216X series B QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM P.
ate current full sine wave; Ths ≤ 38 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 16 -800 800 UNIT V A I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature - 140 150 98 100 2 5 5 0.5 150 125 A A A2s A/µs A V W W ˚C ˚C over any 20 ms period -40 - 1 Although not recommended, off-state voltages u.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BTA216X-800C |
NXP |
Three quadrant triacs | |
2 | BTA216X-800E |
NXP |
Three quadrant triacs | |
3 | BTA216X-800F |
NXP |
Three quadrant triacs | |
4 | BTA216X-500B |
NXP |
Three quadrant triacs | |
5 | BTA216X-500C |
NXP |
Three quadrant triacs | |
6 | BTA216X-600B |
NXP |
Three quadrant triacs | |
7 | BTA216X-600C |
NXP |
Three quadrant triacs | |
8 | BTA216X-600D |
WeEn |
Three quadrant triac | |
9 | BTA216X-600E |
WeEn |
Three quadrant triac | |
10 | BTA216X-600F |
WeEn |
Three quadrant triac | |
11 | BTA216X |
NXP |
Three quadrant triacs | |
12 | BTA216 |
NXP |
Three quadrant triacs |