BTA216X - NXP

BTA216X Three quadrant triacs

Glass passivated high commutation triacs in a full pack, plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber. QUICK REFERENCE DATA SYMBOL PARAMETER MAX. MAX. MAX. UNIT VDRM.

Features

(IEC 134). SYMBOL PARAMETER CONDITIONS MIN. VDRM Repetitive peak off-state voltages -500 - 5001 IT(RMS) ITSM I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature full sine wave; Ths ≤ 38 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/μs over any 20 ms period - - -40 - MAX. -600 .