BTA1759N3 - Cystech Electonics Corp

BTA1759N3 PNP Transistor

• High breakdown voltage. (BVCEO=-400V) • Low saturation voltage, typical VCE(sat) =-0.2V at Ic/IB =-20mA/-2mA. • Wide SOA (safe operation area). • Complementary to BTC4505N3. Symbol BTA1759N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Coll.

Features

F www.DataSheet4U.com Spec. No. : C309N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 2/4 Test Conditions IC=-50µA IC=-1mA IE=-50µA VCB=-400V VCE=-300V, REB=4kΩ VEB=-6V IC=-20mA, IB=-2mA IC=-20mA, IB=-2mA VCE=-10V, IC=-10mA VCE=-10V, IC=-10mA, f=5MHz VCB=-10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% BTA1759N3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gian vs Collector Current 1000 10000 Saturation Voltage---(mV) www.DataSheet4U.com Spec. No. : C309N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page .