• High breakdown voltage. (BVCEO=-400V) • Low saturation voltage, typical VCE(sat) = -0.2V at Ic / IB = -20mA /-2mA. • Wide SOA (safe operation area). • Complementary to BTC4505A3. Symbol BTA1759A3 Outline TO-92 B:Base C:Collector E:Emitter EBC Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Vol.
A V V MHz pF
www.DataSheet4U.com Spec. No. : C309A3-R
Issued Date : 2003.10.15
Revised Date : 2004.04.02 Page No. : 2/4
Test Conditions IC=-50µA IC=-1mA IE=-50µA VCB=-400V VCE=-300V, REB=4kΩ VEB=-6V IC=-20mA, IB=-2mA IC=-20mA, IB=-2mA VCE=-10V, IC=-10mA VCE=-10V, IC=-10mA, f=5MHz VCB=-10V, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
BTA1759A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000 VCE=10V Current Gain---HFE Current Gain---HFE 1000
www.DataSheet4U.com Spec. No. : C309A3-R
Issued Date : 2003.10.15
Revi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BTA1759M3 |
Cystech Electonics Corp |
PNP Transistor | |
2 | BTA1759N3 |
Cystech Electonics Corp |
PNP Transistor | |
3 | BTA1721N3 |
Cystech Electonics Corp |
PNP Transistor | |
4 | BTA1722N3 |
Cystech Electonics Corp |
PNP Transistor | |
5 | BTA1727J3 |
CYStech |
PNP Transistor | |
6 | BTA1727L3 |
Cystech Electonics Corp |
PNP Transistor | |
7 | BTA1727M3 |
CYStech |
PNP Transistor | |
8 | BTA1774C3 |
Cystech Electonics Corp |
PNP Transistor | |
9 | BTA1797M3 |
CYStech |
PNP Transistor | |
10 | BTA10 |
STMicroelectronics |
logic level and standard Triacs | |
11 | BTA10 |
Sirectifier |
Discrete Triacs | |
12 | BTA10-400B |
ST Microelectronics |
(BTA10-B/C) Standard Triacs |