• The BTP1579S3 is designed for high voltage amplification application. • High BVCEO, BVCEO= -120V • Complementary to BTC4102S3. Symbol BTA1579S3 Outline SOT-323 B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resist.
C307S3
Issued Date : 2003.06.27
Revised Date : Page No. : 2/4
Test Conditions IC=-50µA IC=-1mA IE=-50µA VCB=-100V VEB=-4V IC=-10mA, IB=-1mA VCE=-6V, IC=-2mA VCE=-12V, IC=-2mA, f=30MHz VCB=-12V, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE
Rank Range K 56~120 P 82~180 Q 120~270 R 180~390
BTA1579S3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000 Saturation Voltage---(mV)
HFE@VCE=5V
www.DataSheet4U.com Spec. No. : C307S3
Issued Date : 2003.06.27
Revised Date : Page No. : 3/4
Saturation Vol.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BTA1576S3 |
Cystech Electonics Corp |
PNP Transistor | |
2 | BTA1577S3 |
Cystech Electonics Corp |
PNP Transistor | |
3 | BTA15 |
Sirectifier |
Discrete Triacs | |
4 | BTA1505E3 |
CYStech |
PNP Epitaxial Planar Transistor | |
5 | BTA151 |
NXP |
Thyristors sensitive gate | |
6 | BTA151-500R |
NXP |
Thyristors sensitive gate | |
7 | BTA151-650R |
NXP |
Thyristors sensitive gate | |
8 | BTA151-800R |
NXP |
Thyristors sensitive gate | |
9 | BTA1514M3 |
Cystech Electonics Corp |
PNP Transistor | |
10 | BTA1514N3 |
Cystech Electonics Corp |
PNP Transistor | |
11 | BTA1542N3 |
Cystech Electonics Corp |
PNP Transistor | |
12 | BTA10 |
STMicroelectronics |
logic level and standard Triacs |