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BTA1514M3 - Cystech Electonics Corp

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BTA1514M3 PNP Transistor

• The BTA1514M3 is designed for general purpose application requiring high breakdown voltage. • Large IC , IC( Max) = -0.6A • High BVCEO, BVCEO= -150V • Complementary to BTC3906M3. • Pb-free package Symbol BTA1514M3 Outline SOT-89 B:Base C:Collector E:Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Vol.

Features

°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO
*VCE(sat) 1
*VCE(sat) 2
*VBE(sat) 1
*VBE(sat) 2 hFE 1 hFE 2 hFE 3 hFE 4 fT Cob Min. -160 -150 -5 100 100 50 120 100 Typ. Max. -50 -50 -0.2 -0.5 -1 -1 390 6 Unit V V V nA nA V V V V MHz pF www.DataSheet4U.com Spec. No. : C307M3 Issued Date : 2007.01.10 Revised Date : Page No. : 2/5 Test Conditions IC=-50μA IC=-1mA IE=-50μA VCB=-120V VEB=-4V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA VCE=-6V, IC=-2mA VCE=-30V, IC=-10mA, f=100MHz VCB=-10V, f=1MHz
*Pulse Test: Pulse Width ≤380.

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