• The BTA1514M3 is designed for general purpose application requiring high breakdown voltage. • Large IC , IC( Max) = -0.6A • High BVCEO, BVCEO= -150V • Complementary to BTC3906M3. • Pb-free package Symbol BTA1514M3 Outline SOT-89 B:Base C:Collector E:Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Vol.
°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO
*VCE(sat) 1
*VCE(sat) 2
*VBE(sat) 1
*VBE(sat) 2 hFE 1 hFE 2 hFE 3 hFE 4 fT Cob Min. -160 -150 -5 100 100 50 120 100 Typ. Max. -50 -50 -0.2 -0.5 -1 -1 390 6 Unit V V V nA nA V V V V MHz pF
www.DataSheet4U.com Spec. No. : C307M3 Issued Date : 2007.01.10 Revised Date : Page No. : 2/5
Test Conditions IC=-50μA IC=-1mA IE=-50μA VCB=-120V VEB=-4V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA VCE=-6V, IC=-2mA VCE=-30V, IC=-10mA, f=100MHz VCB=-10V, f=1MHz
*Pulse Test: Pulse Width ≤380.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BTA1514N3 |
Cystech Electonics Corp |
PNP Transistor | |
2 | BTA151 |
NXP |
Thyristors sensitive gate | |
3 | BTA151-500R |
NXP |
Thyristors sensitive gate | |
4 | BTA151-650R |
NXP |
Thyristors sensitive gate | |
5 | BTA151-800R |
NXP |
Thyristors sensitive gate | |
6 | BTA15 |
Sirectifier |
Discrete Triacs | |
7 | BTA1505E3 |
CYStech |
PNP Epitaxial Planar Transistor | |
8 | BTA1542N3 |
Cystech Electonics Corp |
PNP Transistor | |
9 | BTA1576S3 |
Cystech Electonics Corp |
PNP Transistor | |
10 | BTA1577S3 |
Cystech Electonics Corp |
PNP Transistor | |
11 | BTA1579S3 |
Cystech Electonics Corp |
PNP Transistor | |
12 | BTA10 |
STMicroelectronics |
logic level and standard Triacs |