BT169BW - INCHANGE

BT169BW Thyristors

·With SOT-223 packaging ·High surge capability ·Glass passivated junctions and center gate fire for greater parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage .

Features

Gate trigger current VTM On-state voltage IH Holding current VGT Gate trigger voltage VD= 12V; IT= 10mA IT=2A IGT=0.5mA ,VD=12V VD= 12V; IT= 10mA MIN MAX UNIT 5 μA 100 5 μA 100 120 μA 1.5 V 5 mA 0.8 V isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors BT169BW NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The produc.