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BT169D-L - NXP Semiconductors

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BT169D-L SCR

Planar passivated very sensitive gate Silicon Controlled Rectifier in a SOT54 (TO-92) plastic package. 2. Features and benefits • Planar passivated for voltage ruggedness and reliability • Very sensitive gate 3. Applications • Ignition circuits • Low power latching circuits • Protection / shut-down circuits: lighting ballasts • Protection / shut-down circu.

Features


• Planar passivated for voltage ruggedness and reliability
• Very sensitive gate 3. Applications
• Ignition circuits
• Low power latching circuits
• Protection / shut-down circuits: lighting ballasts
• Protection / shut-down circuits: Switched Mode Power Supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDRM repetitive peak offstate voltage VRRM repetitive peak reverse voltage ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; state current tp = 10 ms; Fig. 4; Fig. 5 IT(RMS) RMS on-state current half sine wave; Tlead ≤ 83 °C; .

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