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BSS84 P-Channel Enhancement Mode Power MOSFET These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load switching, power management in portable and battery–powered products such as computers, printers, cellular and cordless te.
ram
PD W
W = Work Week
ORDERING INFORMATION
Device
Package
Shipping
BSS84
SOT
–23 3000 Tape & Reel
Preferred devices are recommended choices for future use and best overall value.
Rev : 01.06.2015
1/4 www.leiditech.com
BSS84
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain
–to
–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc)
Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate
–Body Leakage Current (VGS = ± 20 Vdc, VDS .
BSS84 - Siemens Semiconductor Group
BSS 84 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Pin 1 .
BSS84 - Fairchild Semiconductor
This P-channel enhancement-mode field-effect transistor is produced using Fairchild’s proprietary, high cell density, DM.
BSS84 - Diodes Incorporated
and Applications This MOSFET has been designed to minimize on-state resistance (RDS(ON)) yet maintain superior switching.
BSS84 - MCC
BSS84 Features • High Density Cell Design for Ultra Low RDS(on) • Rugged and Reliable • Epoxy Meets UL 94 V-0 Flammabil.
BSS84 - GOOD-ARK
The BSS84 utilizes the latest processing techniques to achieve high cell density and low on-resistance. These features m.
BSS84 - JCET
These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power.
BSS84 - WEITRON
BSS84 Small Signal MOSFET P-Channel 3 DRAIN Features: *Low On-Resistance : 10 *Low Input Capacitance: 30PF *Low Out p.
BSS84 - TAITRON
Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Drain Current Pulsed Power Dissipation Max. Thermal Re.
BSS84 - Kexin
SMD Type Ƶ Features ƽ VDS (V) = -50V ƽ ID = -130 mA ƽ RDS(ON) ˘ 10ȍ (VGS = -5V) TraMnOsiSsFtoErsT P-Channel MOSFET BSS.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BSS80 |
Siemens Semiconductor Group |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
|
| 2 | BSS80 |
Infineon Technologies |
PNP Transistors |
|
| 3 | BSS80 |
Kexin |
PNP Silicon Switching Transistors |
|
| 4 | BSS806N |
Infineon Technologies |
Small-Signal-Transistor |
|
| 5 | BSS806NE |
Infineon |
Small-Signal-Transistor |
|
| 6 | BSS80B |
Siemens Semiconductor Group |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
|
| 7 | BSS80B |
Infineon Technologies AG |
PNP Silicon Switching Transistors |
|
| 8 | BSS80B |
Zetex Semiconductors |
(BSS80B/C) SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS |
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| 9 | BSS80B |
Kexin |
PNP Silicon Switching Transistors |
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| 10 | BSS80B |
Motorola |
GENERAL PURPOSE TRANSISTOR |
|
| 11 | BSS80C |
Siemens Semiconductor Group |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
|
| 12 | BSS80C |
Infineon Technologies AG |
PNP Silicon Switching Transistors |
|