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) BSS80B,C CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol vCEO vCBO vEBO 'C THERMAL CHARACTERISTICS Characteristic *Total Device Dissipation, Ta = 25°C Derate above 25°C Symbol PD Storag.
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BSS80C - Siemens Semiconductor Group
PNP Silicon Switching Transistors BSS 80 BSS 82 High DC current gain q Low collector-emitter saturation voltage q Comp.
BSS80C - Infineon Technologies AG
BSS80, BSS82 PNP Silicon Switching Transistors High DC current gain: 0.1mA to 500 mA Low collector-emitter saturatio.
BSS80C - Zetex Semiconductors
www.DataSheet4U.com SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS ISSUE 2 SEPTEMBER 95 PARTMARKING DETAIL 7 BSS80B.
BSS80C - Kexin
SMD Type TransistIoCrs PNP Silicon Switching Transistors BSS80,BSS82 Features High DC current gain: 0.1mA to 500 mA..
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BSS80 |
Siemens Semiconductor Group |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
|
| 2 | BSS80 |
Infineon Technologies |
PNP Transistors |
|
| 3 | BSS80 |
Kexin |
PNP Silicon Switching Transistors |
|
| 4 | BSS806N |
Infineon Technologies |
Small-Signal-Transistor |
|
| 5 | BSS806NE |
Infineon |
Small-Signal-Transistor |
|
| 6 | BSS80B |
Siemens Semiconductor Group |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
|
| 7 | BSS80B |
Infineon Technologies AG |
PNP Silicon Switching Transistors |
|
| 8 | BSS80B |
Zetex Semiconductors |
(BSS80B/C) SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS |
|
| 9 | BSS80B |
Kexin |
PNP Silicon Switching Transistors |
|
| 10 | BSS80B |
Motorola |
GENERAL PURPOSE TRANSISTOR |
|
| 11 | BSS81 |
Infineon Technologies |
NPN Transistors |
|
| 12 | BSS81 |
Kexin |
NPN Silicon Switching Transistors |
|