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SMD Type TransistIoCrs NPN Silicon Switching Transistors BSS79,BSS81 Features High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Co.
High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation,TS = 77 Junction temperature Storage temperature Junction - soldering point Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg RthJS BSS79 BSS81 40 35 75 6 800 1 100 200 330 150 -65 to +150 220 Unit V V V mA A mA mA mW K/W 0-0.
BSS79 - Siemens Semiconductor Group
NPN Silicon Switching Transistors BSS 79 BSS 81 High DC current gain q Low collector-emitter saturation voltage q Comp.
BSS79 - Infineon Technologies
BSS79, BSS81 NPN Silicon Switching Transistors High DC current gain: 0.1mA to 500 mA Low collector-emitter saturatio.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BSS70 |
ETC |
SOT23 PNP TRANSISTORS |
|
| 2 | BSS70R |
ETC |
SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS |
|
| 3 | BSS71 |
TT |
SILICON PLANAR EPITAXIAL NPN TRANSISTOR |
|
| 4 | BSS71 |
Motorola |
HIGH VOLTAGE TRANSISTOR |
|
| 5 | BSS71 |
Seme LAB |
Bipolar NPN Device |
|
| 6 | BSS72 |
Seme LAB |
Bipolar NPN Device |
|
| 7 | BSS72 |
Motorola |
HIGH VOLTAGE TRANSISTOR |
|
| 8 | BSS73 |
Motorola |
HIGH VOLTAGE TRANSISTOR |
|
| 9 | BSS73 |
Seme LAB |
Bipolar NPN Device |
|
| 10 | BSS74 |
Seme LAB |
HIGH VOLTAGE PNP SILICON TRANSISTOR |
|
| 11 | BSS74 |
Motorola |
HIGH VOLTAGE TRANSISTOR |
|
| 12 | BSS74 |
Central Semiconductor |
PNP SILICON HIGH VOLTAGE TRANSISTOR |
|