SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS ISSUE 2 SEPTEMBER 1995 7 PARTMARKING DETAILS BSS69 BSS70 BSS69R BSS70R L2 L3 L6 L7 SYMBOL VCBO VCEO VEBO ICM IC IB PTOT t j:tstg MIN. -40 -40 -5 -50 -0.25 -0.40 -0.65 30 40 50 30 15 60 80 100 60 30 200 250 4.5 10 Typ. 5 35 225 70 -0.85 -0.95 BSS69 BSS70 C B VALUE -40 -40 -5 -200 -100 -50 330 -5.
9
MAX. UNIT
V V V nA V V V V
CONDITIONS.
IC=-1mA IC=-10µA IE=-10µA VCES=-30V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA
* IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA
* IC=-100µA, IC=-1mA, IC=-10mA, VCE=-1V IC=-50mA
*, IC=-100mA
*, IC=-100µA, IC=-1mA, IC=-10mA, VCE=-1V IC=-50mA
*, IC=-100mA
*,
150
Static Forward Current Transfer Ratio
BSS70
hFE
300
Transition Frequency Collector-Base Capacitance Emitter-Base Capacitance Noise Figure
BSS69 BSS70
fT Cobo Cibo N td; tf ts tf
MHz MHz pF pF dB ns ns ns
IC=-10mA, VCE=-20V f=100MHz VCB=-5V, f=100kHz VEB=-0.5V, f=100kHz IC=-100µΑ, VCE=-5V RS=1kΩ, f=10Hz to15.7 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSS70 |
ETC |
SOT23 PNP TRANSISTORS | |
2 | BSS71 |
TT |
SILICON PLANAR EPITAXIAL NPN TRANSISTOR | |
3 | BSS71 |
Motorola |
HIGH VOLTAGE TRANSISTOR | |
4 | BSS71 |
Seme LAB |
Bipolar NPN Device | |
5 | BSS72 |
Seme LAB |
Bipolar NPN Device | |
6 | BSS72 |
Motorola |
HIGH VOLTAGE TRANSISTOR | |
7 | BSS73 |
Motorola |
HIGH VOLTAGE TRANSISTOR | |
8 | BSS73 |
Seme LAB |
Bipolar NPN Device | |
9 | BSS74 |
Seme LAB |
HIGH VOLTAGE PNP SILICON TRANSISTOR | |
10 | BSS74 |
Motorola |
HIGH VOLTAGE TRANSISTOR | |
11 | BSS74 |
Central Semiconductor |
PNP SILICON HIGH VOLTAGE TRANSISTOR | |
12 | BSS74R |
Seme LAB |
HIGH VOLTAGE PNP SILICON TRANSISTOR |