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min. Static Characteristics Drain-source breakdown voltage
VGS=0, ID=1mA
Values typ. max.
Unit
V(BR)DSS
55
-
-
V
Gate threshold voltage, V GS = VDS
ID=2.7µA
VGS(th)
1.2
1.6
2
Zero gate voltage drain current
VDS=55V, V GS=0, T j=25°C VDS=55V, V GS=0, T j=150°C
IDSS IGSS 0.01 10 1 1 100 100
µA
Gate-source leakage current
VGS=20V, VDS=0V
nA
Drain-source on-state resistance
VGS=4.5V, ID=270mA
RDS(on)
-
430
825
mΩ
Drain-source on-state resistance
VGS=10V, ID=270mA
RDS(on)
-
346
650
1Device on 40mm
*40mm
*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BSS67 |
ETC |
SOT23 NPN TRANSISTORS |
|
| 2 | BSS67-M7 |
ETC |
SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS |
|
| 3 | BSS67R |
ETC |
SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS |
|
| 4 | BSS67R-M9 |
ETC |
SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS |
|
| 5 | BSS60 |
Philips |
PNP Transistoor |
|
| 6 | BSS60 |
Motorola |
DARLINGTON TRANSISTOR |
|
| 7 | BSS606N |
Infineon Technologies |
Small-Signal-Transistor |
|
| 8 | BSS60A |
Comset Semiconductors |
(BSS60A - BSS62A) SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 9 | BSS61 |
NXP |
PNP transistors |
|
| 10 | BSS61 |
Philips |
PNP Transistoor |
|
| 11 | BSS61 |
Motorola |
DARLINGTON TRANSISTOR |
|
| 12 | BSS61A |
Comset Semiconductors |
(BSS60A - BSS62A) SILICON PLANAR EPITAXIAL TRANSISTORS |
|