SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS ISSUE 2 SEPTEMBER 1995 7 PARTMARKING DETAILS BSS66 BSS67 BSS66R BSS67R M6 M7 M8 M9 SYMBOL VCBO VCEO VEBO ICM IC IB PTOT t j:tstg MIN. 40 60 6 50 0.20 0.30 0.65 20 35 50 30 15 40 70 100 60 30 250 300 4 8 Typ. 6 35 200 50 0.85 0.95 BSS66 BSS67 C B VALUE 60 40 6 200 100 50 330 -55 to +150 UNIT V V.
nA V V V V
CONDITIONS.
IC=1mA IC=10µA IE=10µA VCES=30V IC=10mA, IB=1mA IC=50mA, IB=5mA
* IC=10mA, IB=1mA IC=50mA, IB=5mA
* IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA
*, IC=100mA
*, IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA
*, IC=100mA
*,
150
Static Forward Current Transfer Ratio
BSS67
hFE
300
Transition Frequency Collector-Base Capacitance Emitter-Base Capacitance Noise Figure
BSS66 BSS67
fT Cobo Cibo N td; tf ts tf
MHz MHz pF pF dB ns ns ns
IC=10mA, VCE=20V f=100MHz VCB=5V, f=100kHz VEB=0.5V, f=100kHz IC=100µA, VCE=5V RS=1kΩ, f=10Hz to15.7 kHz VCC=3V, IC=10mA IB1= IB2 =1mA
Switching tim.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSS60 |
Philips |
PNP Transistoor | |
2 | BSS60 |
Motorola |
DARLINGTON TRANSISTOR | |
3 | BSS606N |
Infineon Technologies |
Small-Signal-Transistor | |
4 | BSS60A |
Comset Semiconductors |
(BSS60A - BSS62A) SILICON PLANAR EPITAXIAL TRANSISTORS | |
5 | BSS61 |
NXP |
PNP transistors | |
6 | BSS61 |
Philips |
PNP Transistoor | |
7 | BSS61 |
Motorola |
DARLINGTON TRANSISTOR | |
8 | BSS61A |
Comset Semiconductors |
(BSS60A - BSS62A) SILICON PLANAR EPITAXIAL TRANSISTORS | |
9 | BSS62 |
NXP |
PNP transistors | |
10 | BSS62 |
Philips |
PNP Transistoor | |
11 | BSS62 |
Motorola |
DARLINGTON TRANSISTOR | |
12 | BSS62A |
Comset Semiconductors |
(BSS60A - BSS62A) SILICON PLANAR EPITAXIAL TRANSISTORS |