BSP372 - Siemens Semiconductor Group

BSP372 SIPMOS Small-Signal Transistor

BSP 372 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • VGS(th) = 0.8 ...2.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type BSP 372 Type BSP 372 VDS 100 V ID 1.7 A RDS(on) 0.31 Ω Package SOT-223 Marking BSP 372 Ordering Code Q 67000-S300 Tape and Reel Information E6327 Maximum Ratings Parameter Continuous d.

Features

... + 150 ≤ 70 ≤ 10 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 100 1.4 0.1 10 10 0.17 2 V VGS = 0 V, ID = 0.25 mA, Tj = 0 °C Gate threshold voltage VGS(th) 0.8 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 100 V, VGS = 0 V, Tj = 25 °C VDS = 100 V, VGS = 0 V, Tj = 125 °C Gate-source leaka.