P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant package. d 1 2 3 g MAM144 s PIN BSP304 1 2 3 BSP304A 1 2 3 SYMBOL DESCRIPTION g d s gate drain source CAUTION Fig.1 Simplified outline and symbol. s g d source gate drain The device is supplied in an antistatic package. The gate-source input must be protected against static d.
• Direct interface to C-MOS, TTL etc.
• High speed switching
• No secondary breakdown. APPLICATIONS
• Intended for use as a Line current interruptor in telephone sets and for applications in relay, high speed and line transformer drivers. PINNING - TO-92 variant
handbook, halfpage
BSP304; BSP304A
DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant package.
d
1
2 3 g
MAM144
s
PIN BSP304 1 2 3 BSP304A 1 2 3
SYMBOL
DESCRIPTION
g d s
gate drain source CAUTION Fig.1 Simplified outline and symbol.
s g d
source gate drain
The device is supplied in an antis.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSP304 |
NXP |
P-channel enhancement mode vertical D-MOS transistors | |
2 | BSP30 |
STMicroelectronics |
MEDIUM POWER AMPLIFIER | |
3 | BSP30 |
Diotec Semiconductor |
Surface mount Si-Epitaxial PlanarTransistors | |
4 | BSP300 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated) | |
5 | BSP300 |
Infineon Technologies AG |
SIPMOS Small-Signal Transistor | |
6 | BSP308 |
Infineon Technologies |
Sipmos(r) Small-signal-transistor | |
7 | BSP31 |
NXP |
PNP medium power transistors | |
8 | BSP31 |
STMicroelectronics |
MEDIUM POWER AMPLIFIER | |
9 | BSP315 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level) | |
10 | BSP315P |
Infineon Technologies AG |
SIPMOS Small-Signal-Transistor | |
11 | BSP316 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level) | |
12 | BSP316P |
Infineon Technologies AG |
SIPMOS Small-Signal-Transistor |