BSP319 - Infineon Technologies AG

BSP319 SIPMOS Small-Signal Transistor

BSP 319 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • VGS(th) = 1.2 ...2.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type VDS 50 V ID 3.8 A RDS(on) 0.07 Ω Package Marking BSP 319 Type BSP 319 SOT-223 BSP 319 Ordering Code Q67000-S273 Tape and Reel Information E6327 Maximum Ratings Parameter Symbol Valu.

Features

-55 ... + 150 -55 ... + 150 ˚C ≤ 70 ≤ 10 E 55 / 150 / 56 K/W 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 0 ˚C V (BR)DSS V 50 - Gate threshold voltage VGS=VDS, ID = 1 mA V GS(th) 1.2 IDSS 1.6 2 µA Zero gate voltage drain current VDS = 50 V, VGS = 0 V, Tj = 25 ˚C VDS = 50 V, VGS = 0 V, Tj = 125 ˚C IGSS 0.1 10 1 100 nA Gate-source lea.