BSP316 - Siemens Semiconductor Group

BSP316 SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

BSP 316 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Pin 1 G Type BSP 316 Type BSP 316 Pin 2 D Pin 3 S Pin 4 D VDS -100 V ID -0.65 A RDS(on) 2.2 Ω Package SOT-223 Marking BSP 316 Ordering Code Q67000-S92 Tape and Reel Information E6327 Maximum Ratings Parameter Drain source voltage Drain-ga.

Features

oxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS -100 -1.1 -0.1 -10 -10 1.4 -2 -1 -100 -100 -100 V VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) -0.8 VGS=VDS, ID = -1 mA Zero gate voltage drain current IDSS µA nA nA Ω 2.2 VDS = -100 V, VGS = 0 V, Tj = 25 °C VDS = -100 V, VGS = 0 V, Tj = 125 °C VDS = -60 V, VGS = 0 V, Tj = 25 °C Gate-source leakage current IGSS RDS.